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| GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm * * Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Screw torque DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg Rating 600 25 60 120 60 120 200 150 -55~150 0.8 Unit V V A A JEDEC W C C Nm 2-21F2C JEITA TOSHIBA Weight: 9.75 g (typ.) Equivalent Circuit Collector Gate Emitter 1 2002-01-18 GT60J322 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (Diode) Symbol IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2) Cies tr 5 ton tf toff VF trr Rth (j-c) Rth (j-c) 15 V 0 -15 V IF = 60 A, VGE = 0 IF = 60 A, VGE = 0, di/dt = -100 A/s 18 Test Condition VGE = 25 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 10 A, VGE = 15 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 3.0 Typ. 0.95 1.25 13500 0.25 0.35 1.00 1.50 1.2 0.6 Max 500 1.0 6.0 1.45 1.65 Unit nA mA V V pF 300 V 1.50 s 1.6 1.0 0.625 0.96 V s C/W C/W 2 2002-01-18 GT60J322 IC - VCE 100 Common emitter Tc = 25C 80 10 VCE - VGE (V) VGE = 8 V Common emitter Tc = -40C 8 15 20 (A) 60 Collector-emitter voltage VCE 10 IC 6 IC = 10 A 4 60 30 Collector current 40 20 2 120 0 0 0.4 0.8 1.2 1.6 2.0 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 10 Common emitter 10 VCE - VGE Common emitter (V) Collector-emitter voltage VCE 6 60 4 30 2 IC = 10 A 0 0 4 8 12 16 20 120 Collector-emitter voltage VCE 8 (V) Tc = 25C Tc = 125C 8 6 120 4 30 2 IC = 10 A 0 0 4 8 12 16 20 60 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 100 Common emitter 80 Tc = 125C 60 3 VCE = 5 V Common emitter VGE = 15 V VCE (sat) - Tc Collector-emitter saturation voltage VCE (sat) (V) (A) IC 2 120 60 1 30 IC = 10 A Collector current 40 25 20 -40 0 0 4 8 12 16 20 0 -40 0 40 80 120 160 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2002-01-18 GT60J322 VCE, VGE - QG 20 50000 Common emitter 16 RL = 5 Tc = 25C 10000 30000 C - VCE Collector-emitter voltage VCE (x25 V) Gate-emitter voltage VGE (V) Cies (pF) Capacitance C 12 8 5000 3000 1000 500 300 Common emitter VGE = 0 f = 1 MHz Tc = 25C 3 10 30 100 4 100 0 0 50 1 Coes Cres 300 1000 3000 100 200 300 400 500 Gate charge QG (nC) Collector-emitter voltage VCE (V) Switching time - RG 5 3 100 300 Safe operating area IC max (pulsed) IC max (continuous) 10 ms* DC operation 10 5 3 1 ms* 10 s* (s) toff 1 tf 50 Switching time 0.3 ton tr 0.1 3 5 10 30 50 Common emitter VCC = 300 V VGG = 15 V IC = 60 A Tc = 25C 100 300 Collector current 0.5 IC (A) 30 100 s* Gate resistance RG () *: Single nonrepetitive pulse Tc = 25C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 0.5 1 30 100 300 1000 Collector-emitter voltage VCE (V) Switching time - IC 3 toff Switching time (s) 1 tf 0.5 0.3 ton tr 0.1 0.05 0 Common emitter VCC = 300 V RG = 18 VGG = 15 V Tc = 25C 20 40 60 80 Collector current IC (A) 4 2002-01-18 GT60J322 Reverse bias SOA 300 10 2 Tc = 25C rth (t) - tw Transient thermal impedance rth (t) (C/W) (A) 100 50 30 10 1 IC Collector current 10 0 Diode IGBT 10 5 3 10-1 Tj < 125C = VGE = 15 V RG = 18 3 10 30 100 3000 1000 10-2 1 1 10-3 10-4 10-3 10-2 10-1 10 0 10 1 10 2 Collector-emitter voltage VCE (V) Pulse width tw (s) IF - VF 100 Common collector VGE = 0 100 Irr trr, - IF 1000 (A) (A) Irr 80 50 30 trr Irr 500 300 Peak reverse recovery current IF Forward current 60 Tc = 125C 40 25 20 -40 10 Common collector di/dt = -100 A/s VGE = 0 Tc = 25C 10 20 30 40 50 10 5 3 0 50 30 60 0 0 0.4 0.8 1.2 1.6 2.0 Forward voltage VF (V) Forward current IF (A) Cj - VR 3000 f = 1 MHz Tc = 25C 1000 1000 100 Irr, trr - di/dt (A) Common collector 80 IF = 60 A Tc = 25C Irr (ns) (pF) trr 500 300 Peak reverse recovery current Reverse recovery time Irr Junction capacitance Cj 60 500 trr 40 100 50 30 20 10 0 3 5 10 30 50 100 300 500 0 0 0 40 80 120 160 200 240 Reverse voltage VR (V) di/dt (A/s) 5 2002-01-18 Reverse recovery time trr (ns) GT60J322 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-01-18 |
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